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 NTE3045 Optoisolator Silicon NPN Darlington Phototransistor Output
Description: The NTE3045 is a gallium arsenide LED optically coupled to a Silicon Photo Darlington transistor in a 6-Lead DIP type package designed for applications requiring electrical isolation, high breakdown voltage, and high current transfer ratios. Characterized for use as telephone relay drivers but provides excellent performance in interfacing and coupling systems, phase and feedback controls, solid state relays, and general purpose switching circuits. Features: D High Sensitivity to Low Input Drive Current D High Collector-Emitter Breakdown Voltage: V(BR)CEO = 80V (Min) D High Input-Output Isolation Guaranteed: VISO = 7500V (Peak) Absolute Maximum Ratings: (TA = +25C, unless otherwise specified) Input LED Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Continuous Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA LED Power Dissipation (TA = +25C with Negligible Power in Output Detector), PD . . . . . . 120mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.41mW/C Output Detector Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Detector Power Dissipation (TA = +25C with Negligible Power in Input LED), PD . . . . . . . . 150mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.76mW/C Total Device Isolation Surge Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), VISO . . . . . . . . . . . 7500V Total Device Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.94mW/C Operating Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +100C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Lead Temperature (During Soldering for 10sec, 1/16" from Case), TL . . . . . . . . . . . . . . . . . . +260C Note 1. Isolation surge voltage is an internal device dielectric breakdown rating. For this test, Pin1 and Pin2 are common, and Pin4, Pin5, and Pin6 are common.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Input LED Reverse Leakage Current Forward Voltage Capacitance Collector-Emitter Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector Output Current Isolation Surge Voltage Isolation Resistance Isolation Capacitance Switching Turn-On Time Turn-Off Time Rise Time Fall Time ton toff tr tf VCC = 10V, RL = 100, IF = 5mA - - - - 3.5 95 1 2 - - - - s s s s IR VF C ICEO VR = 3V IF = 10mA VR = 0, f = 1MHz VCE = 60V - - - - 80 5 50 7500 - - 0.05 1.15 18 - - - - - 1011 0.2 10 2.0 - 1 - - - - - - A V pF A V V mA V pF Symbol Test Conditions Min Typ Max Unit
Photodarlington (TA = +25C, IF = 0 unless otherwise specified) V(BR)CEO IC = 1mA V(BR)ECO IE = 100A IC VISO RISO CISO VCE = 1.5V, IF = 10mA 60Hz Peak AC, 5sec, Note 2, Note 3 V = 500V, Note 2 v = 0, f = 1MHz, Note 2
Coupled (TA = +25C unless otherwise specified)
Note 2. For this test LED Pin1 and Pin2 are common and Phototransistor Pin4 and Pin5 are common. Note 3. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.
6
5
4
Pin Connection Diagram Anode Cathode N.C. 1 2 3 6 N.C. 5 Collector 4 Emitter .200 (5.08) Max
1
2
3
.260 (6.6) Max
.070 (1.78) Max .350 (8.89) Max .350 (8.89) Max .300 (7.62)
.085 (2.16) Max
.100 (2.54)


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